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| H7N0308LD, H7N0308LS, H7N0308LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1124-0500 (Previous: ADE-208-1535C) Rev.5.00 Apr 07, 2006 Features * Low on-resistance RDS (on) = 3.8 m typ. * Low drive current * 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 2 1 3 2 3 H7N0308LD H7N0308LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N0308LM Rev.5.00 Apr 07, 2006 page 1 of 7 H7N0308LD, H7N0308LS, H7N0308LM Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 30 20 70 280 70 100 1.25 89 150 -55 to +150 Unit V V A A A W C/W C/W C C Pch ch-c Note 2 ch-a Tch Tstg Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 30 20 -- -- 1.0 -- -- 54 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 3.8 6.0 90 3350 840 480 52 11 10 30 370 80 27 0.93 60 Max -- -- 10 10 2.5 4.8 8.5 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 Note 3 ID = 1 mA, VDS = 10 V ID = 35 A, VGS = 10 V Note 3 ID = 35 A, VGS = 4.5 V ID = 35 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 70 A VGS = 10 V, ID = 35 A RL = 0.29 Rg = 4.7 IF = 70 A, VGS = 0 IF = 70 A, VGS = 0 diF/dt = 50 A/s Note 3 Note 3 Rev.5.00 Apr 07, 2006 page 2 of 7 H7N0308LD, H7N0308LS, H7N0308LM Main Characteristics Power vs. Temperature Derating 160 500 Maximum Safe Operation Area 10 s Pch (W) 120 (A) 100 1 m 10 s 0 s DC Op er ati PW on = ID Channel Dissipation 10 80 Drain Current 10 ms Operation in 1 this area is limited by RDS (on) 0.1 Tc = 25C 1 shot Pulse 0.3 1 3 10 30 100 40 0 0 50 100 150 200 0.01 0.1 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 4.5 V 100 Pulse Test 3.5 V Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 80 ID (A) 3V 80 60 60 Drain Current 40 Drain Current 40 Tc = 75C 25C 20 -25C 0 20 VGS = 2.5 V 0 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS(on) (mV) 500 Pulse Test 400 Drain to Source On State Resistance RDS(on) (m) 100 Pulse Test 30 10 3 1 0.3 0.1 1 3 10 30 100 300 1000 VGS = 4.5 V 300 ID = 50 A 10 V 200 100 20 A 10 A 0 4 8 12 16 20 0 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.5.00 Apr 07, 2006 page 3 of 7 H7N0308LD, H7N0308LS, H7N0308LM Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 12 Pulse Test 10 8 6 4 2 0 -25 10 V ID = 10 A, 20 A ID = 50 A VGS = 4.5 V 1000 300 100 30 25C 10 3 1 1 3 10 30 100 75C Static Drain to Source on State Resistance RDS(on) (m) Forward Transfer Admittance vs. Drain Current Tc = -25C 10 A, 20 A, 50 A VDS = 10 V Pulse Test 0 25 50 75 100 125 150 Case Temperature Tc (C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 3000 Body to Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 100 50 Capacitance C (pF) 1000 Coss 20 di / dt = 50 A / s VGS = 0, Ta = 25C 10 0.1 300 Crss VGS = 0 f = 1 MHz 100 0.3 1 3 10 30 100 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics (V) ID = 70 A 40 VDD = 5 V 10 V 20 V VDS 20 8 Switching Characteristics VGS (V) 20 1000 VGS = 10 V, VDS = 10 V 500 Rg = 4.7 , duty 1 % tr 200 100 50 td(off) 50 VGS VDS 16 Drain to Source Voltage 30 12 Gate to Source Voltage Switching Time t (ns) td(on) tf 0.3 1 3 10 30 100 10 0 0 20 40 VDD = 20 V 10 V 5V 60 80 4 20 10 0.1 0 100 Gate Charge Qg (nc) Drain Current ID (A) Rev.5.00 Apr 07, 2006 page 4 of 7 H7N0308LD, H7N0308LS, H7N0308LM Reverse Drain Current vs. Souece to Drain Voltage 100 Reverse Drain Current IDR (A) 80 10 V 60 5V VGS = 0, -5 V 40 20 Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 ch - c (t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C PDM PW T 0.05 0.02 0.03 1 e 0.0 puls ot h 1s D= PW T 0.01 10 100 1m 10 m 100 m 1 10 Pulse Width PW (S) Rev.5.00 Apr 07, 2006 page 5 of 7 H7N0308LD, H7N0308LS, H7N0308LM Package Dimensions Package Name LDPAK(L) JEITA Package Code RENESAS Code PRSS0004AE-A Previous Code LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g Unit: mm (1.4) 4.44 0.2 10.2 0.3 1.3 0.15 11.3 0.5 0.3 10.0 + 0.5 - 8.6 0.3 1.3 0.2 1.37 0.2 0.76 0.1 2.54 0.5 2.54 0.5 11.0 0.5 0.2 0.86 + 0.1 - 2.49 0.2 0.4 0.1 Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm 4.44 0.2 10.2 0.3 (1.4) 8.6 0.3 + 0.3 - 0.5 10.0 (1.5) (1.5) 2.49 0.2 0.2 0.1 + 0.1 - 7.8 7.0 2.2 1.37 0.2 1.3 0.2 2.54 0.5 0.3 3.0 + 0.5 - 0.2 0.86 + 0.1 - 0.4 0.1 2.54 0.5 Rev.5.00 Apr 07, 2006 page 6 of 7 1.7 1.3 0.15 7.8 6.6 H7N0308LD, H7N0308LS, H7N0308LM Package Name LDPAK(S)-(2) JEITA Package Code RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g Unit: mm 4.44 0.2 10.2 0.3 (1.4) 8.6 0.3 + 0.3 - 0.5 2.49 0.2 10.0 (1.5) (2.3) 0.2 0.1 + 0.1 - 7.8 7.0 2.2 1.37 0.2 1.3 0.2 2.54 0.5 0.4 0.1 0.3 5.0 + 0.5 - 0.2 0.86 + 0.1 - 2.54 0.5 Ordering Information Part Name H7N0308LD-E H7N0308LSTL-E 500 pcs 1000 pcs Quantity Shipping Container Box (Conductive Sack) Taping H7N0308LMTL-E 1000 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Apr 07, 2006 page 7 of 7 1.7 1.3 0.15 7.8 6.6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0 |
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